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Rohm SemiconductorTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

RCJ120N20TL

MOSFET N-CH 200V 12A LPTS

RCJ120N20TL by Rohm Semiconductor
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Active

$1.18 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRohm Semiconductor
ModelRCJ120N20TL
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)325mOhm @ 6A, 10V
Vgs(th) (Max)5.25V @ 1mA
Gate Charge (Qg)15 nC @ 10 V
Input Capacitance (Ciss)740 pF @ 25 V
Power Dissipation (Max)1.56W (Ta), 40W (Tc)
Drive Voltage10V
Supplier Device PackageLPTS
RoHSRoHS
Part StatusActive

Application & Notes

RCJ120N20TL by Rohm Semiconductor is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 325mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.25V @ 1mA
Rds On (Max) @ Id, Vgs325mOhm @ 6A, 10V
Power Dissipation (Max)1.56W (Ta), 40W (Tc)
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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