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Rohm SemiconductorTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

R6020PNJFRATL

MOSFET N-CH 600V 20A LPTS

R6020PNJFRATL by Rohm Semiconductor
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

Automotive, AEC-Q101

Status

Active

Datasheet

View Datasheet ↗

$6.57 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRohm Semiconductor
ModelR6020PNJFRATL
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)250mOhm @ 10A, 10V
Vgs(th) (Max)4.5V @ 1mA
Gate Charge (Qg)65 nC @ 10 V
Input Capacitance (Ciss)2040 pF @ 25 V
Power Dissipation (Max)304W (Tc)
Drive Voltage10V
Supplier Device PackageLPTS
RoHSRoHS
Part StatusActive

Application & Notes

R6020PNJFRATL by Rohm Semiconductor is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 250mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for R6020PNJFRATL

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 1mA
Rds On (Max) @ Id, Vgs250mOhm @ 10A, 10V
Power Dissipation (Max)304W (Tc)
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds2040 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)

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