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Rohm SemiconductorTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

R6012JNJGTL

MOSFET N-CH 600V 12A LPTS

R6012JNJGTL by Rohm Semiconductor
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Active

Datasheet

View Datasheet ↗

$3.15 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRohm Semiconductor
ModelR6012JNJGTL
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)390mOhm @ 6A, 15V
Vgs(th) (Max)7V @ 2.5mA
Gate Charge (Qg)28 nC @ 15 V
Input Capacitance (Ciss)900 pF @ 100 V
Power Dissipation (Max)160W (Tc)
Drive Voltage15V
Supplier Device PackageLPTS
RoHSRoHS
Part StatusActive

Application & Notes

R6012JNJGTL by Rohm Semiconductor is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 390mOhm @ 6A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for R6012JNJGTL

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MOSFET N-CH 650V 11A D2PAK

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB6035AL

N-CHANNEL POWER MOSFET

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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MOSFET N-CH 30V 80A TO263-3

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id7V @ 2.5mA
Rds On (Max) @ Id, Vgs390mOhm @ 6A, 15V
Power Dissipation (Max)160W (Tc)
Gate Charge (Qg) (Max) @ Vgs28 nC @ 15 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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