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Rohm SemiconductorTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

R6004KNJTL

MOSFET N-CHANNEL 600V 4A TO263

R6004KNJTL by Rohm Semiconductor
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Active

Datasheet

View Datasheet ↗

$0.97 / unit (market reference)

MOQ: 1000 pcs

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Parameters

ParameterValue
BrandRohm Semiconductor
ModelR6004KNJTL
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)980mOhm @ 1.5A, 10V
Vgs(th) (Max)5V @ 1mA
Gate Charge (Qg)10.2 nC @ 10 V
Input Capacitance (Ciss)280 pF @ 25 V
Power Dissipation (Max)58W (Tc)
Drive Voltage10V
Supplier Device PackageLPTS
RoHSRoHS
Part StatusActive

Application & Notes

R6004KNJTL by Rohm Semiconductor is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 980mOhm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for R6004KNJTL

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Components Guide

Alternatives & Replacements

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onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB8442-F085

MOSFET N-CH 40V 28A TO263AB

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onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTB90N02T4

MOSFET N-CH 24V 90A D2PAK

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB65R225C7ATMA1

MOSFET N-CH 650V 11A D2PAK

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB6035AL

N-CHANNEL POWER MOSFET

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N03S2L-05

MOSFET N-CH 30V 80A TO263-3

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 1mA
Rds On (Max) @ Id, Vgs980mOhm @ 1.5A, 10V
Power Dissipation (Max)58W (Tc)
Gate Charge (Qg) (Max) @ Vgs10.2 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)

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