Rohm SemiconductorSOT-23-6 Thin, TSOT-23-6RoHS
QS6K1TR
MOSFET 2N-CH 30V 1A TSMT6
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
SOT-23-6 Thin, TSOT-23-6
Status
Active
Datasheet
$0.62 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | QS6K1TR |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 238mOhm @ 1A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 1mA |
| Gate Charge (Qg) | 2.4nC @ 4.5V |
| Input Capacitance (Ciss) | 77pF @ 10V |
| Power Dissipation (Max) | 1.25W |
| Supplier Device Package | TSMT6 (SC-95) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
QS6K1TR by Rohm Semiconductor is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 238mOhm @ 1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for QS6K1TR
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.25W |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 238mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 77pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1A |
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