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NXP USA Inc.TO-261-4, TO-261AARoHS

PHT6N06LT,135

MOSFET N-CH 55V 2.5A SOT223

PHT6N06LT,135 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-261-4, TO-261AA

Series

TrenchMOS™

Status

Obsolete

$0.21 / unit (market reference)

MOQ: 1443 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPHT6N06LT,135
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)150mOhm @ 5A, 5V
Vgs(th) (Max)2V @ 1mA
Gate Charge (Qg)4.5 nC @ 5 V
Input Capacitance (Ciss)330 pF @ 25 V
Power Dissipation (Max)1.8W (Ta), 8.3W (Tc)
Drive Voltage5V
Supplier Device PackageSC-73
RoHSRoHS
Part StatusObsolete

Application & Notes

PHT6N06LT,135 by NXP USA Inc. is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 150mOhm @ 5A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for PHT6N06LT,135

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Alternatives & Replacements

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Infineon TechnologiesStockTO-261-4, TO-261AA

BSP318SL6327HTSA1

MOSFET N-CH 60V 2.6A SOT223-4

Request QuoteRFQ →
NXP USA Inc.StockTO-261-4, TO-261AA

PMT760EN,115

MOSFET N-CH 100V 900MA SOT223

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP135L6327HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP125L6327HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP135L6906HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP88E6327

MOSFET N-CH 240V 350MA SOT223-4

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±13V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs150mOhm @ 5A, 5V
Power Dissipation (Max)1.8W (Ta), 8.3W (Tc)
Gate Charge (Qg) (Max) @ Vgs4.5 nC @ 5 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)

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