PC
Nexperia USA Inc.3-XFDFNRoHS

PMH260UNEH

MOSFET N-CH 20V 1.2A DFN0606-3

PMH260UNEH by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

3-XFDFN

Series

Automotive, AEC-Q101, TrenchMOS™

Status

Active

$0.37 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandNexperia USA Inc.
ModelPMH260UNEH
Package / Case3-XFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)310mOhm @ 700mA, 4.5V
Vgs(th) (Max)950mV @ 250µA
Gate Charge (Qg)0.95 nC @ 4.5 V
Input Capacitance (Ciss)41 pF @ 10 V
Power Dissipation (Max)360mW (Ta), 2.23W (Tc)
Drive Voltage1.5V, 4.5V
Supplier Device PackageDFN0606-3 (SOT8001)
RoHSRoHS
Part StatusActive

Application & Notes

PMH260UNEH by Nexperia USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 310mOhm @ 700mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA
Rds On (Max) @ Id, Vgs310mOhm @ 700mA, 4.5V
Power Dissipation (Max)360mW (Ta), 2.23W (Tc)
Gate Charge (Qg) (Max) @ Vgs0.95 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds41 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)

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