PartsCubeGlobal
Panjit International Inc.SOT-563, SOT-666RoHS

PJX8828_R1_00001

30V N-CHANNEL ENHANCEMENT MODE M

Subcategory

Transistors Fets Mosfets Arrays

Package

SOT-563, SOT-666

Status

Active

$0.42 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandPanjit International Inc.
ModelPJX8828_R1_00001
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)1.2Ohm @ 300mA, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)0.9nC @ 4.5V
Input Capacitance (Ciss)45pF @ 10V
Power Dissipation (Max)300mW (Ta)
Supplier Device PackageSOT-563
RoHSRoHS
Part StatusActive

Application & Notes

PJX8828_R1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.2Ohm @ 300mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

NTZD3152PT1Honsemi

MOSFET 2P-CH 20V 430MA SOT563-6

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max300mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds45pF @ 10V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.