Panjit International Inc.SOT-23-6RoHS
PJS6816_S1_00001
20V N-CHANNEL ENHANCEMENT MODE M
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
SOT-23-6
Status
Active
$0.45 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Panjit International Inc. |
| Model | PJS6816_S1_00001 |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 29mOhm @ 5.2A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 7nC @ 4.5V |
| Input Capacitance (Ciss) | 513pF @ 10V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Supplier Device Package | SOT-23-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PJS6816_S1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 29mOhm @ 5.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 513pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.