MOSFET 2 P-CH 20V 2.2A SOT26

Transistors Fets Mosfets Arrays
SOT-23-6
Active
$1.69 / unit (market reference)
MOQ: 1 pcs
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| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM3911DCX6 RFG |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 140mOhm @ 2.2A, 4.5V |
| Vgs(th) (Max) | 950mV @ 250µA |
| Gate Charge (Qg) | 15.23nC @ 4.5V |
| Input Capacitance (Ciss) | 882.51pF @ 6V |
| Power Dissipation (Max) | 1.15W |
| Supplier Device Package | SOT-26 |
| RoHS | RoHS |
| Part Status | Active |
TSM3911DCX6 RFG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 140mOhm @ 2.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 1.15W |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15.23nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 882.51pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
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