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Panjit International Inc.SOT-23-6RoHS

PJS6601_S2_00001

20V COMPLEMENTARY ENHANCEMENT MO

Subcategory

Transistors Fets Mosfets Arrays

Package

SOT-23-6

Status

Active

$0.56 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandPanjit International Inc.
ModelPJS6601_S2_00001
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel Complementary
Drain to Source Voltage (Vdss)20V
Rds On (Max)56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
Vgs(th) (Max)1.2V @ 250µA
Gate Charge (Qg)4.6nC @ 4.5V, 5.4nC @ 4.5V
Input Capacitance (Ciss)350pF @ 10V, 416pF @ 10V
Power Dissipation (Max)1.25W (Ta)
Supplier Device PackageSOT-23-6
RoHSRoHS
Part StatusActive

Application & Notes

PJS6601_S2_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for PJS6601_S2_00001

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →
Diodes IncorporatedStockSOT-23-6

DMG9926UDM-7

MOSFET 2N-CH 20V 4.2A SOT-26

Request QuoteRFQ →
Micro Commercial CoStockSOT-23-6

SIL2300-TP

DUAL N-CHANNEL MOSFET,SOT23-6L

Request QuoteRFQ →
Taiwan Semiconductor CorporationStockSOT-23-6

TSM3911DCX6 RFG

MOSFET 2 P-CH 20V 2.2A SOT26

Request QuoteRFQ →
Diodes IncorporatedStockSOT-23-6

DMN601DMK-7

MOSFET 2N-CH 60V 0.51A SOT26

Request QuoteRFQ →
Central Semiconductor CorpStockSOT-23-6

CMXDM7002A TR PBFREE

MOSFET 2N-CH 60V 0.28A SOT26

Request QuoteRFQ →
Diodes IncorporatedStockSOT-23-6

DMG6968UDM-7

MOSFET 2N-CH 20V 6.5A SOT-26

Request QuoteRFQ →

All Technical Specifications

FET TypeN and P-Channel Complementary
FET FeatureStandard
Power - Max1.25W (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Rds On (Max) @ Id, Vgs56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 4.5V, 5.4nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 10V, 416pF @ 10V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta), 3.1A (Ta)

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