PartsCubeGlobal
Panjit International Inc.SOT-23-6RoHS

PJS6600_S1_00001

30V COMPLEMENTARY ENHANCEMENT MO

Subcategory

Transistors Fets Mosfets Arrays

Package

SOT-23-6

Status

Active

$0.48 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandPanjit International Inc.
ModelPJS6600_S1_00001
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel Complementary
Drain to Source Voltage (Vdss)30V
Rds On (Max)200mOhm @ 1.6A, 4.5V, 370mOhm @ 1.1A, 4.5V
Vgs(th) (Max)1.3V @ 250µA
Gate Charge (Qg)1.5nC @ 4.5V, 1.6nC @ 4.5V
Input Capacitance (Ciss)93pF @ 15V, 125pF @ 15V
Power Dissipation (Max)1.25W (Ta)
Supplier Device PackageSOT-23-6
RoHSRoHS
Part StatusActive

Application & Notes

PJS6600_S1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 200mOhm @ 1.6A, 4.5V, 370mOhm @ 1.1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

DMG9926UDM-7Diodes Incorporated

MOSFET 2N-CH 20V 4.2A SOT-26

All Technical Specifications

FET TypeN and P-Channel Complementary
FET FeatureStandard
Power - Max1.25W (Ta)
Vgs(th) (Max) @ Id1.3V @ 250µA
Rds On (Max) @ Id, Vgs200mOhm @ 1.6A, 4.5V, 370mOhm @ 1.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V, 1.6nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds93pF @ 15V, 125pF @ 15V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta), 1.1A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.