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Panjit International Inc.8-SOIC (0.154", 3.90mm Width)RoHS

PJL9802_R2_00001

30V DUAL N-CHANNEL ENHANCEMENT M

Subcategory

Transistors Fets Mosfets Arrays

Package

8-SOIC (0.154", 3.90mm Width)

Status

Active

$0.55 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandPanjit International Inc.
ModelPJL9802_R2_00001
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)48mOhm @ 5A, 10V
Vgs(th) (Max)2.1V @ 250µA
Gate Charge (Qg)5.8nC @ 10V
Input Capacitance (Ciss)235pF @ 15V
Power Dissipation (Max)1.7W (Ta)
Supplier Device Package8-SOP
RoHSRoHS
Part StatusActive

Application & Notes

PJL9802_R2_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 48mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max1.7W (Ta)
Vgs(th) (Max) @ Id2.1V @ 250µA
Rds On (Max) @ Id, Vgs48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs5.8nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds235pF @ 15V
Current - Continuous Drain (Id) @ 25°C5A (Ta)

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