PC
NXP USA Inc.TO-261-4, TO-261AARoHS

PHT6N06T,135

MOSFET N-CH 55V 5.5A SOT223

PHT6N06T,135 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-261-4, TO-261AA

Series

TrenchMOS™

Status

Obsolete

$0.21 / unit (market reference)

MOQ: 1443 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPHT6N06T,135
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)150mOhm @ 5A, 10V
Vgs(th) (Max)4V @ 1mA
Gate Charge (Qg)5.6 nC @ 10 V
Input Capacitance (Ciss)175 pF @ 25 V
Power Dissipation (Max)8.3W (Tc)
Drive Voltage10V
Supplier Device PackageSC-73
RoHSRoHS
Part StatusObsolete

Application & Notes

PHT6N06T,135 by NXP USA Inc. is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 150mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA
Rds On (Max) @ Id, Vgs150mOhm @ 5A, 10V
Power Dissipation (Max)8.3W (Tc)
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 10 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds175 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)

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