PBSS5330PA - 30 V, 3 A PNP LOW V

Transistors Bipolar Bjt Single
3-PowerUDFN
Active
$0.09 / unit (market reference)
MOQ: 3271 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PBSS5330PA,135 |
| Package / Case | 3-PowerUDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 500 mW |
| Supplier Device Package | 3-HUSON (2x2) |
| RoHS | RoHS |
| Part Status | Active |
PBSS5330PA,135 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-PowerUDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
NEXPERIA PBSS5630PA - SMALL SIGN
NEXPERIA PBSS5612PA - SMALL SIGN
TRANS NPN 20V 2A 3HUSON
NEXPERIA BC54-16PA - SMALL SIGNA
NEXPERIA PBSS4612PA - SMALL SIGN
NOW NEXPERIA BC51-10PA - SMALL S
| Power - Max | 500 mW |
| Transistor Type | PNP |
| Frequency - Transition | 165MHz |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 300mA, 3A |
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 3A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
Submit your quantity and details — we will reply within 24 hours.