PBSS5612PA,115
NEXPERIA PBSS5612PA - SMALL SIGN
Transistors Bipolar Bjt Single
3-PowerUDFN
Active
$0.10 / unit (market reference)
MOQ: 3008 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PBSS5612PA,115 |
| Package / Case | 3-PowerUDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 2.1 W |
| Supplier Device Package | 3-HUSON (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PBSS5612PA,115 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-PowerUDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PBSS5612PA,115
Alternatives & Replacements
View All →PBSS5630PA,115
NEXPERIA PBSS5630PA - SMALL SIGN
BC68PA,115
TRANS NPN 20V 2A 3HUSON
BC54-16PA,115
NEXPERIA BC54-16PA - SMALL SIGNA
PBSS4612PA,115
NEXPERIA PBSS4612PA - SMALL SIGN
BC51-10PA,115
NOW NEXPERIA BC51-10PA - SMALL S
BC54-10PA,115
NOW NEXPERIA BC54-10PA - SMALL S
All Technical Specifications
| Power - Max | 2.1 W |
| Transistor Type | PNP |
| Frequency - Transition | 60MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 300mA, 6A |
| Current - Collector (Ic) (Max) | 6 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 190 @ 2A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
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