NX7002BKHH
MOSFET N-CH 60V 350MA DFN0606-3

Transistors Fets Mosfets Single
3-XFDFN
Active
$0.28 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | NX7002BKHH |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 2.8Ohm @ 200mA, 10V |
| Vgs(th) (Max) | 2.1V @ 250µA |
| Gate Charge (Qg) | 1 nC @ 10 V |
| Input Capacitance (Ciss) | 22.2 pF @ 30 V |
| Power Dissipation (Max) | 380mW (Ta), 2.8W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | DFN0606-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NX7002BKHH by Nexperia USA Inc. is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.8Ohm @ 200mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NX7002BKHH
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 200mA, 10V |
| Power Dissipation (Max) | 380mW (Ta), 2.8W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 22.2 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
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