PC
onsemi8-PowerTDFN, 5 LeadsRoHS

NVMFS5885NLT1G

MOSFET N-CH 60V 10.2A 5DFN

NVMFS5885NLT1G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN, 5 Leads

Series

Automotive, AEC-Q101

Status

Obsolete

$0.93 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
Brandonsemi
ModelNVMFS5885NLT1G
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)15mOhm @ 15A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)21 nC @ 10 V
Input Capacitance (Ciss)1340 pF @ 25 V
Power Dissipation (Max)3.7W (Ta), 54W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package5-DFN (5x6) (8-SOFL)
RoHSRoHS
Part StatusObsolete

Application & Notes

NVMFS5885NLT1G by onsemi is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN, 5 Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs15mOhm @ 15A, 10V
Power Dissipation (Max)3.7W (Ta), 54W (Tc)
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds1340 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10.2A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.