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onsemi8-PowerTDFN, 5 LeadsRoHS

NTMFS4835NT3G

MOSFET N-CH 30V 13A/130A 5DFN

NTMFS4835NT3G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN, 5 Leads

Status

Obsolete

Datasheet

View Datasheet ↗

$0.40 / unit (market reference)

MOQ: 760 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTMFS4835NT3G
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)3.5mOhm @ 30A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)52 nC @ 11.5 V
Input Capacitance (Ciss)3100 pF @ 12 V
Power Dissipation (Max)890mW (Ta), 62.5W (Tc)
Drive Voltage4.5V, 11.5V
Supplier Device Package5-DFN (5x6) (8-SOFL)
RoHSRoHS
Part StatusObsolete

Application & Notes

NTMFS4835NT3G by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN, 5 Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.5mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NTMFS4835NT3G

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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onsemiStock8-PowerTDFN, 5 Leads

NTMFS4985NFT3G

MOSFET N-CH 30V 17.5A/65A 5DFN

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onsemiStock8-PowerTDFN, 5 Leads

NTMFS4839NHT1G

MOSFET N-CH 30V 9.5A/64A 5DFN

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onsemiStock8-PowerTDFN, 5 Leads

NTMFS4121NT1G

MOSFET N-CH 30V 11A 5DFN

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onsemiStock8-PowerTDFN, 5 Leads

NTMFS4C10NT1G-001

MOSFET N-CH 30V 8.2A/46A 5DFN

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onsemiStock8-PowerTDFN, 5 Leads

NTMFS4936NT1G

MOSFET N-CH 30V 11.6A/79A 5DFN

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onsemiStock8-PowerTDFN, 5 Leads

NTMFS4839NT1G

MOSFET N-CH 30V 9.5A/64A 5DFN

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs3.5mOhm @ 30A, 10V
Power Dissipation (Max)890mW (Ta), 62.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs52 nC @ 11.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 130A (Tc)

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