NVF6P02T3G
MOSFET P-CH 20V 10A SOT-223
Transistors Fets Mosfets Single
TO-261-4, TO-261AA
Automotive, AEC-Q101
Not For New Designs
$1.01 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NVF6P02T3G |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 50mOhm @ 6A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1200 pF @ 16 V |
| Power Dissipation (Max) | 8.3W (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | SOT-223 (TO-261) |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
NVF6P02T3G by onsemi is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 6A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NVF6P02T3G
Alternatives & Replacements
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BSP135L6906HTSA1
MOSFET N-CH 600V 120MA SOT223-4
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 6A, 4.5V |
| Power Dissipation (Max) | 8.3W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 16 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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