onsemi8-PowerTDFN, 5 LeadsRoHS
NTMFS6B03NT1G
MOSFET N-CH 100V 19A/132A 5DFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerTDFN, 5 Leads
Status
Obsolete
Datasheet
$6.61 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTMFS6B03NT1G |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 4.8mOhm @ 20A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 58 nC @ 10 V |
| Input Capacitance (Ciss) | 4200 pF @ 50 V |
| Power Dissipation (Max) | 3.4W (Ta), 165W (Tc) |
| Drive Voltage | 6V, 10V |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTMFS6B03NT1G by onsemi is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN, 5 Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTMFS6B03NT1G
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| Power Dissipation (Max) | 3.4W (Ta), 165W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 132A (Tc) |
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