PC
onsemi8-PowerTDFN, 5 LeadsRoHS

NTMFS6B03NT1G

MOSFET N-CH 100V 19A/132A 5DFN

NTMFS6B03NT1G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN, 5 Leads

Status

Obsolete

$6.61 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
Brandonsemi
ModelNTMFS6B03NT1G
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)4.8mOhm @ 20A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)58 nC @ 10 V
Input Capacitance (Ciss)4200 pF @ 50 V
Power Dissipation (Max)3.4W (Ta), 165W (Tc)
Drive Voltage6V, 10V
Supplier Device Package5-DFN (5x6) (8-SOFL)
RoHSRoHS
Part StatusObsolete

Application & Notes

NTMFS6B03NT1G by onsemi is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN, 5 Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs4.8mOhm @ 20A, 10V
Power Dissipation (Max)3.4W (Ta), 165W (Tc)
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 132A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.