PC
onsemi8-PowerTDFN, 5 LeadsRoHS

NTMFS5H600NLT1G

MOSFET N-CH 60V 35A/250A 5DFN

NTMFS5H600NLT1G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN, 5 Leads

Status

Active

$4.81 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTMFS5H600NLT1G
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)1.3mOhm @ 50A, 10V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)89 nC @ 10 V
Input Capacitance (Ciss)6680 pF @ 30 V
Power Dissipation (Max)3.3W (Ta), 160W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package5-DFN (5x6) (8-SOFL)
RoHSRoHS
Part StatusActive

Application & Notes

NTMFS5H600NLT1G by onsemi is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN, 5 Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.3mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs1.3mOhm @ 50A, 10V
Power Dissipation (Max)3.3W (Ta), 160W (Tc)
Gate Charge (Qg) (Max) @ Vgs89 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds6680 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C35A (Ta), 250A (Tc)

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