NTMFS5H419NLT1G
MOSFET N-CH 40V 29A/155A 5DFN
Transistors Fets Mosfets Single
8-PowerTDFN, 5 Leads
Active
$1.65 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTMFS5H419NLT1G |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 2.1mOhm @ 20A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 45 nC @ 10 V |
| Input Capacitance (Ciss) | 2900 pF @ 20 V |
| Power Dissipation (Max) | 3.1W (Ta), 89W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTMFS5H419NLT1G by onsemi is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN, 5 Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.1mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTMFS5H419NLT1G
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 20A, 10V |
| Power Dissipation (Max) | 3.1W (Ta), 89W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 155A (Tc) |
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