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onsemi8-PowerTDFN, 5 LeadsRoHS

NTMFS4H013NFT1G

MOSFET N-CH 25V 43A/269A 5DFN

NTMFS4H013NFT1G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN, 5 Leads

Status

Last Time Buy

Datasheet

View Datasheet ↗

$1.12 / unit (market reference)

MOQ: 268 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTMFS4H013NFT1G
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)25 V
Rds On (Max)0.9mOhm @ 30A, 10V
Vgs(th) (Max)2.1V @ 250µA
Gate Charge (Qg)56 nC @ 10 V
Input Capacitance (Ciss)3923 pF @ 12 V
Power Dissipation (Max)2.7W (Ta), 104W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package5-DFN (5x6) (8-SOFL)
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

NTMFS4H013NFT1G by onsemi is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN, 5 Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 0.9mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NTMFS4H013NFT1G

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA
Rds On (Max) @ Id, Vgs0.9mOhm @ 30A, 10V
Power Dissipation (Max)2.7W (Ta), 104W (Tc)
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Drain to Source Voltage (Vdss)25 V
Input Capacitance (Ciss) (Max) @ Vds3923 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C43A (Ta), 269A (Tc)

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