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Flip Electronics8-PowerWDFNRoHS

NTMFD0D9N02P1E

IFET 25V 0.9 MOHM PQFN56MP

Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerWDFN

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandFlip Electronics
ModelNTMFD0D9N02P1E
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss)30V, 25V
Rds On (Max)3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Vgs(th) (Max)2V @ 340µA, 2V @ 1mA
Gate Charge (Qg)9nC @ 4.5V, 30nC @ 4.5V
Input Capacitance (Ciss)1400pF @ 15V, 5050pF @ 13V
Power Dissipation (Max)960mW (Ta), 1.04W (Ta)
Supplier Device Package8-PQFN (5x6)
RoHSRoHS
Part StatusActive

Application & Notes

NTMFD0D9N02P1E by Flip Electronics is an N-channel power MOSFET rated at 30V, 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Power - Max960mW (Ta), 1.04W (Ta)
Vgs(th) (Max) @ Id2V @ 340µA, 2V @ 1mA
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V, 30nC @ 4.5V
Drain to Source Voltage (Vdss)30V, 25V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 15V, 5050pF @ 13V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 30A (Ta)

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