Flip Electronics8-PowerWDFNRoHS
NTMFD0D9N02P1E
IFET 25V 0.9 MOHM PQFN56MP
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerWDFN
Status
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Flip Electronics |
| Model | NTMFD0D9N02P1E |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 30V, 25V |
| Rds On (Max) | 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V |
| Vgs(th) (Max) | 2V @ 340µA, 2V @ 1mA |
| Gate Charge (Qg) | 9nC @ 4.5V, 30nC @ 4.5V |
| Input Capacitance (Ciss) | 1400pF @ 15V, 5050pF @ 13V |
| Power Dissipation (Max) | 960mW (Ta), 1.04W (Ta) |
| Supplier Device Package | 8-PQFN (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTMFD0D9N02P1E by Flip Electronics is an N-channel power MOSFET rated at 30V, 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Power - Max | 960mW (Ta), 1.04W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 340µA, 2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V, 30nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V, 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V, 5050pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 30A (Ta) |
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