NTMD6P02R2SG
MOSFET 2P-CH 20V 4.8A 8SOIC
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
Obsolete
$0.43 / unit (market reference)
MOQ: 704 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTMD6P02R2SG |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 33mOhm @ 6.2A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 35nC @ 4.5V |
| Input Capacitance (Ciss) | 1700pF @ 16V |
| Power Dissipation (Max) | 750mW |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTMD6P02R2SG by onsemi is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 33mOhm @ 6.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTMD6P02R2SG
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MOSFET 2N-CH 35V 4.5A 8SOIC
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 750mW |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 6.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A |
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