NTMD3N08LR2
MOSFET PWR N-CHAN DUAL 80V 8SOIC
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
Obsolete
$0.22 / unit (market reference)
MOQ: 1374 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NTMD3N08LR2 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 80V |
| Rds On (Max) | 215mOhm @ 2.5A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 15nC @ 10V |
| Input Capacitance (Ciss) | 480pF @ 25V |
| Power Dissipation (Max) | 3.1W |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTMD3N08LR2 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 80V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 215mOhm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTMD3N08LR2
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 3.1W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Drain to Source Voltage (Vdss) | 80V |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
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