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onsemi6-UDFN Exposed PadRoHS

NTLUS4C12NTAG

MOSFET N-CH 30V 6.8A 6UDFN

NTLUS4C12NTAG by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

6-UDFN Exposed Pad

Status

Last Time Buy

$0.82 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTLUS4C12NTAG
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)9mOhm @ 9A, 10V
Vgs(th) (Max)2.1V @ 250µA
Gate Charge (Qg)18 nC @ 10 V
Input Capacitance (Ciss)1172 pF @ 15 V
Power Dissipation (Max)630mW (Ta)
Drive Voltage3.3V, 10V
Supplier Device Package6-UDFN (2x2)
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

NTLUS4C12NTAG by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9mOhm @ 9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA
Rds On (Max) @ Id, Vgs9mOhm @ 9A, 10V
Power Dissipation (Max)630mW (Ta)
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1172 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)3.3V, 10V
Current - Continuous Drain (Id) @ 25°C6.8A (Ta)

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