PMPB27EP,115
30 V, SINGLE P-CHANNEL TRENCH MO
Transistors Fets Mosfets Single
6-UDFN Exposed Pad
Active
Price available on request
MOQ: 2965 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PMPB27EP,115 |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 29mOhm @ 6.1A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 45 nC @ 10 V |
| Input Capacitance (Ciss) | 1570 pF @ 15 V |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | DFN2020MD-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PMPB27EP,115 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 29mOhm @ 6.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMPB27EP,115
Alternatives & Replacements
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MOSFET P-CH 20V 4A 6UDFN
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 6.1A, 10V |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
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