NTLJD2104PTBG
MOSFET 2P-CH 12V 2.4A 6WDFN
Transistors Fets Mosfets Arrays
6-WDFN Exposed Pad
Obsolete
$0.24 / unit (market reference)
MOQ: 1255 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTLJD2104PTBG |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 12V |
| Rds On (Max) | 90mOhm @ 3A, 4.5V |
| Vgs(th) (Max) | 800mV @ 250µA |
| Gate Charge (Qg) | 8nC @ 4.5V |
| Input Capacitance (Ciss) | 467pF @ 6V |
| Power Dissipation (Max) | 700mW |
| Supplier Device Package | 6-WDFN (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTLJD2104PTBG by onsemi is an N-channel power MOSFET rated at 12V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 90mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTLJD2104PTBG
Alternatives & Replacements
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NTLJD2104PTAG
MOSFET 2P-CH 12V 2.4A 6WDFN
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 700mW |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 467pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A |
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