NTE3301
IGBT-N-CHAN ENHANCEMENT
Transistors Igbts Single
TO-220-3 Full Pack
Active
$6.72 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | NTE3301 |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 40 W |
| Supplier Device Package | TO-220 Full Pack |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTE3301 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTE3301
Alternatives & Replacements
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INSULATED GATE BIPOLAR TRANSISTO
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IGBT 600V 6.8A 25W TO220FP
All Technical Specifications
| Input Type | Standard |
| Power - Max | 40 W |
| Td (on/off) @ 25°C | 150ns/450ns |
| Vce(on) (Max) @ Vge, Ic | 8V @ 20V, 170A |
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Pulsed (Icm) | 170 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
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