NTE2987
MOSFET N-CH 100V 20A TO220
Transistors Fets Mosfets Single
TO-220-3
Active
$4.65 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | NTE2987 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 120mOhm @ 10A, 5V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 30 nC @ 5 V |
| Input Capacitance (Ciss) | 1500 pF @ 25 V |
| Power Dissipation (Max) | 105W (Tc) |
| Drive Voltage | 5V |
| Supplier Device Package | TO-220 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTE2987 by NTE Electronics, Inc is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 120mOhm @ 10A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTE2987
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±15V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 10A, 5V |
| Power Dissipation (Max) | 105W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
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