NTE108-1
RF TRANS NPN 15V 600MHZ TO106
Transistors Bipolar Bjt Rf
TO-106-3 Domed
Active
$0.80 / unit (market reference)
MOQ: 3 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | NTE108-1 |
| Package / Case | TO-106-3 Domed |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 625mW |
| Supplier Device Package | TO-106 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTE108-1 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-106-3 Domed package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTE108-1
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All Technical Specifications
| Gain | 15dB |
| Power - Max | 625mW |
| Transistor Type | NPN |
| Frequency - Transition | 600MHz |
| Noise Figure (dB Typ @ f) | 6dB @ 60MHz |
| Current - Collector (Ic) (Max) | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
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