Infineon TechnologiesTO-236-3, SC-59, SOT-23-3RoHS
BFR35APE6327HTSA1
RF TRANS NPN 15V 5GHZ SOT23-3
Category
Subcategory
Transistors Bipolar Bjt Rf
Package
TO-236-3, SC-59, SOT-23-3
Status
Active
$0.48 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BFR35APE6327HTSA1 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 280mW |
| Supplier Device Package | PG-SOT23 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BFR35APE6327HTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Gain | 10.5dB ~ 16dB |
| Power - Max | 280mW |
| Transistor Type | NPN |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz |
| Current - Collector (Ic) (Max) | 45mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 15mA, 8V |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
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