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onsemiTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

NTB27N06LT4

MOSFET N-CH 60V 27A D2PAK

NTB27N06LT4 by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Obsolete

Datasheet

View Datasheet ↗

$0.37 / unit (market reference)

MOQ: 802 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTB27N06LT4
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)48mOhm @ 13.5A, 5V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)32 nC @ 5 V
Input Capacitance (Ciss)990 pF @ 25 V
Power Dissipation (Max)88.2W (Tc)
Drive Voltage5V
Supplier Device PackageD²PAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NTB27N06LT4 by onsemi is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 48mOhm @ 13.5A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NTB27N06LT4

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs48mOhm @ 13.5A, 5V
Power Dissipation (Max)88.2W (Tc)
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds990 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C27A (Ta)

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