NGB8206NTF4G
INSULATED GATE BIPOLAR TRANSISTO
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Obsolete
$1.09 / unit (market reference)
MOQ: 275 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NGB8206NTF4G |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 150 W |
| Supplier Device Package | D2PAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NGB8206NTF4G by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NGB8206NTF4G
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All Technical Specifications
| Input Type | Logic |
| Power - Max | 150 W |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
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