SGW23N60UFDTM
N-CHANNEL IGBT
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Obsolete
$0.83 / unit (market reference)
MOQ: 361 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | SGW23N60UFDTM |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 100 W |
| Supplier Device Package | D2PAK (TO-263) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SGW23N60UFDTM by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SGW23N60UFDTM
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 49 nC |
| Power - Max | 100 W |
| Test Condition | 300V, 12A, 23Ohm, 15V |
| Switching Energy | 115µJ (on), 135µJ (off) |
| Td (on/off) @ 25°C | 17ns/60ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 12A |
| Reverse Recovery Time (trr) | 60 ns |
| Current - Collector (Ic) (Max) | 23 A |
| Current - Collector Pulsed (Icm) | 92 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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