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Rochester Electronics, LLCTO-220-3 Full PackRoHS

NDF08N50ZH

MOSFET N-CH 500V 8.5A TO220FP

NDF08N50ZH by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3 Full Pack

Status

Obsolete

$0.47 / unit (market reference)

MOQ: 642 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelNDF08N50ZH
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)850mOhm @ 3.6A, 10V
Vgs(th) (Max)4.5V @ 100µA
Gate Charge (Qg)46 nC @ 10 V
Input Capacitance (Ciss)1095 pF @ 25 V
Power Dissipation (Max)35W (Tc)
Drive Voltage10V
Supplier Device PackageTO-220-2 Full Pack
RoHSRoHS
Part StatusObsolete

Application & Notes

NDF08N50ZH by Rochester Electronics, LLC is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 850mOhm @ 3.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 100µA
Rds On (Max) @ Id, Vgs850mOhm @ 3.6A, 10V
Power Dissipation (Max)35W (Tc)
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds1095 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)

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