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Rochester Electronics, LLCSOT-23-6 Thin, TSOT-23-6RoHS

NDC631N

MOSFET N-CH 20V 4.1A SUPERSOT6

NDC631N by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Status

Obsolete

Datasheet

View Datasheet ↗

$0.17 / unit (market reference)

MOQ: 1803 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelNDC631N
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)60mOhm @ 4.1A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)14 nC @ 4.5 V
Input Capacitance (Ciss)365 pF @ 10 V
Power Dissipation (Max)1.6W (Ta)
Drive Voltage2.7V, 4.5V
Supplier Device PackageSuperSOT™-6
RoHSRoHS
Part StatusObsolete

Application & Notes

NDC631N by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 60mOhm @ 4.1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NDC631N

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC633N

MOSFET N-CH 30V 5.2A SUPERSOT6

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Infineon TechnologiesStockSOT-23-6 Thin, TSOT-23-6

BSL307SPL6327HTSA1

MOSFET P-CH 30V 5.5A TSOP-6

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

CPH6355-TL-W

SINGLE P-CHANNEL POWER MOSFET, -

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC655AN

MOSFET N-CH 30V 6.3A SUPERSOT6

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

SI3457DV

SMALL SIGNAL FIELD-EFFECT TRANSI

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onsemiStockSOT-23-6 Thin, TSOT-23-6

NTGD4169FT1G

MOSFET N-CH 30V 2.6A 6TSOP

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs60mOhm @ 4.1A, 4.5V
Power Dissipation (Max)1.6W (Ta)
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds365 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta)

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