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onsemiTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

NDBA100N10BT4H

MOSFET N-CH 100V 100A D2PAK

NDBA100N10BT4H by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Obsolete

Datasheet

View Datasheet ↗

$0.89 / unit (market reference)

MOQ: 336 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNDBA100N10BT4H
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)6.9mOhm @ 50A, 15V
Vgs(th) (Max)4V @ 1mA
Gate Charge (Qg)35 nC @ 10 V
Input Capacitance (Ciss)2950 pF @ 50 V
Power Dissipation (Max)110W (Tc)
Drive Voltage10V, 15V
Supplier Device PackageD²PAK (TO-263)
RoHSRoHS
Part StatusObsolete

Application & Notes

NDBA100N10BT4H by onsemi is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.9mOhm @ 50A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NDBA100N10BT4H

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA
Rds On (Max) @ Id, Vgs6.9mOhm @ 50A, 15V
Power Dissipation (Max)110W (Tc)
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds2950 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Current - Continuous Drain (Id) @ 25°C100A (Ta)

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