MSCSM70HM19CT3AG
PM-MOSFET-SIC-SBD~-SP3F
Transistors Fets Mosfets Arrays
Module
Active
$268.53 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | MSCSM70HM19CT3AG |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Type | 4 N-Channel |
| Drain to Source Voltage (Vdss) | 700V |
| Rds On (Max) | 19mOhm @ 40A, 20V |
| Vgs(th) (Max) | 2.4V @ 4mA |
| Gate Charge (Qg) | 215nC @ 20V |
| Input Capacitance (Ciss) | 4500pF @ 700V |
| Power Dissipation (Max) | 365W (Tc) |
| Supplier Device Package | SP3F |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MSCSM70HM19CT3AG by Microchip Technology is an N-channel power MOSFET rated at 700V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 19mOhm @ 40A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MSCSM70HM19CT3AG
Alternatives & Replacements
View All →FF23MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 50A MODULE
CAS120M12BM2
MOSFET 2N-CH 1200V 193A MODULE
DF11MR12W1M1B11BOMA1
MOSFET MODULE 1200V 50A
FF11MR12W1M1PB11BPSA1
MOSFET MODULE 1200V DUAL
DF23MR12W1M1B11BPSA1
MOSFET MOD 1200V 25A
FF11MR12W1M1B11BOMA1
MOSFET 2N-CH 1200V 100A MODULE
All Technical Specifications
| FET Type | 4 N-Channel |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 365W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 4mA |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 40A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 215nC @ 20V |
| Drain to Source Voltage (Vdss) | 700V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 700V |
| Current - Continuous Drain (Id) @ 25°C | 124A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.