Microchip TechnologyModuleRoHS
MSCSM120AM11CT3AG
PM-MOSFET-SIC-SBD~-SP3F
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Module
Status
Active
Datasheet
$409.54 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | MSCSM120AM11CT3AG |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Type | 2 N Channel (Phase Leg) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 10.4mOhm @ 120A, 20V |
| Vgs(th) (Max) | 2.8V @ 3mA |
| Gate Charge (Qg) | 696nC @ 20V |
| Input Capacitance (Ciss) | 9060pF @ 1000V |
| Power Dissipation (Max) | 1.067kW (Tc) |
| Supplier Device Package | SP3F |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MSCSM120AM11CT3AG by Microchip Technology is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10.4mOhm @ 120A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MSCSM120AM11CT3AG
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All Technical Specifications
| FET Type | 2 N Channel (Phase Leg) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 1.067kW (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 3mA |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 120A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 696nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 9060pF @ 1000V |
| Current - Continuous Drain (Id) @ 25°C | 254A (Tc) |
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