MSC100SM70JCU3
SICFET N-CH 700V 124A SOT227
Transistors Fets Mosfets Single
SOT-227-4, miniBLOC
Active
$61.78 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | MSC100SM70JCU3 |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 700 V |
| Rds On (Max) | 19mOhm @ 40A, 20V |
| Vgs(th) (Max) | 2.4V @ 4mA |
| Gate Charge (Qg) | 215 nC @ 20 V |
| Input Capacitance (Ciss) | 4500 pF/m @ 700 V |
| Power Dissipation (Max) | 365W (Tc) |
| Drive Voltage | 20V |
| Supplier Device Package | SOT-227 (ISOTOP®) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MSC100SM70JCU3 by Microchip Technology is an N-channel power MOSFET rated at 700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-227-4, miniBLOC package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 19mOhm @ 40A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MSC100SM70JCU3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 2.4V @ 4mA |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 40A, 20V |
| Power Dissipation (Max) | 365W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF/m @ 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 124A (Tc) |
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