MMBTH10-7-F
RF TRANS NPN 25V 650MHZ SOT23-3
Transistors Bipolar Bjt Rf
TO-236-3, SC-59, SOT-23-3
Active
$0.26 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | MMBTH10-7-F |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 300mW |
| Supplier Device Package | SOT-23-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MMBTH10-7-F by Diodes Incorporated is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MMBTH10-7-F
Alternatives & Replacements
View All →BFR35APE6327HTSA1
RF TRANS NPN 15V 5GHZ SOT23-3
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NPN TRANSISTOR
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RF 0.05A, ULTRA HIGH FREQ BAND
NSVMMBTH10LT1G
RF TRANS NPN 25V 650MHZ SOT23
2SC5227A-5-TB-E
RF TRANS NPN 10V 7GHZ 3CP
BFR106E6327HTSA1
RF TRANS NPN 15V 5GHZ SOT23-3
All Technical Specifications
| Power - Max | 300mW |
| Transistor Type | NPN |
| Frequency - Transition | 650MHz |
| Current - Collector (Ic) (Max) | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
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