LND150N3-G
MOSFET N-CH 500V 30MA TO92-3
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Transistors Fets Mosfets Single
TO-226-3, TO-92-3 (TO-226AA)
Active
$0.57 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | LND150N3-G |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Rds On (Max) | 1000Ohm @ 500µA, 0V |
| Input Capacitance (Ciss) | 10 pF @ 25 V |
| Power Dissipation (Max) | 740mW (Ta) |
| Drive Voltage | 0V |
| Supplier Device Package | TO-92-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
LND150N3-G by Microchip Technology is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1000Ohm @ 500µA, 0V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for LND150N3-G
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Depletion Mode |
| Rds On (Max) @ Id, Vgs | 1000Ohm @ 500µA, 0V |
| Power Dissipation (Max) | 740mW (Ta) |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Current - Continuous Drain (Id) @ 25°C | 30mA (Tj) |
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