IXYSTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS
IXGA4N100
IGBT 1000V 8A 40W TO263AA
Category
Subcategory
Transistors Igbts Single
Package
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Status
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXGA4N100 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 40 W |
| Supplier Device Package | TO-263AA |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXGA4N100 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 13.6 nC |
| Power - Max | 40 W |
| Test Condition | 800V, 4A, 120Ohm, 15V |
| Switching Energy | 900µJ (off) |
| Td (on/off) @ 25°C | 20ns/390ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 4A |
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Pulsed (Icm) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
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