PC
Infineon TechnologiesTO-220-3RoHS

IRLZ34NPBF

MOSFET N-CH 55V 30A TO220AB

IRLZ34NPBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3

Series

HEXFET®

Status

Active

$1.47 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRLZ34NPBF
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)35mOhm @ 16A, 10V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)25 nC @ 5 V
Input Capacitance (Ciss)880 pF @ 25 V
Power Dissipation (Max)68W (Tc)
Drive Voltage4V, 10V
Supplier Device PackageTO-220AB
RoHSRoHS
Part StatusActive

Application & Notes

IRLZ34NPBF by Infineon Technologies is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 35mOhm @ 16A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs35mOhm @ 16A, 10V
Power Dissipation (Max)68W (Tc)
Gate Charge (Qg) (Max) @ Vgs25 nC @ 5 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds880 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)

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