IRLMS2002TRPBF
MOSFET N-CH 20V 6.5A MICRO6
Transistors Fets Mosfets Single
SOT-23-6
HEXFET®
Active
$0.72 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRLMS2002TRPBF |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 30mOhm @ 6.5A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 22 nC @ 5 V |
| Input Capacitance (Ciss) | 1310 pF @ 15 V |
| Power Dissipation (Max) | 2W (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | Micro6™(SOT23-6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRLMS2002TRPBF by Infineon Technologies is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 6.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRLMS2002TRPBF
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V |
| Power Dissipation (Max) | 2W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
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