Rochester Electronics, LLCSOT-23-6 Thin, TSOT-23-6RoHS
CPH6434-TL-E
N-CHANNEL SILICON MOSFET
Category
Subcategory
Transistors Fets Mosfets Single
Package
SOT-23-6 Thin, TSOT-23-6
Status
Active
$0.23 / unit (market reference)
MOQ: 1312 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
✅ 365-Day Warranty🚚 Global Shipping
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | CPH6434-TL-E |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 41mOhm @ 3A, 4V |
| Gate Charge (Qg) | 7 nC @ 4 V |
| Input Capacitance (Ciss) | 790 pF @ 10 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Supplier Device Package | 6-CPH |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CPH6434-TL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 41mOhm @ 3A, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CPH6434-TL-E
Alternatives & Replacements
View All →Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6
FDC633N
MOSFET N-CH 30V 5.2A SUPERSOT6
Request QuoteRFQ →
Infineon TechnologiesStockSOT-23-6 Thin, TSOT-23-6
BSL307SPL6327HTSA1
MOSFET P-CH 30V 5.5A TSOP-6
Request QuoteRFQ →
Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6
CPH6355-TL-W
SINGLE P-CHANNEL POWER MOSFET, -
Request QuoteRFQ →
Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6
FDC655AN
MOSFET N-CH 30V 6.3A SUPERSOT6
Request QuoteRFQ →
Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6
SI3457DV
SMALL SIGNAL FIELD-EFFECT TRANSI
Request QuoteRFQ →
onsemiStockSOT-23-6 Thin, TSOT-23-6
NTGD4169FT1G
MOSFET N-CH 30V 2.6A 6TSOP
Request QuoteRFQ →
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 3A, 4V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.