IRG6S320UPBF
IGBT 330V 50A 114W D2PAK
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRG6S320UPBF |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 114 W |
| Supplier Device Package | D2PAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRG6S320UPBF by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRG6S320UPBF
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All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 46 nC |
| Power - Max | 114 W |
| Test Condition | 196V, 12A, 10Ohm |
| Td (on/off) @ 25°C | 24ns/89ns |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 24A |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 330 V |
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